Silicon

OVERVIEW

Silicon (Si) is grown by Czochralski (CZ) pulling techniques. CZ Silicon is commonly used as substrate material for infrared reflectors and windows in the 1.5 - 8 micron region. The strong absorption band at 9 microns makes it unsuitable for CO2 laser transmission applications, but it is frequently used for laser mirrors because of its high thermal conductivity and low density. Applications: window, lens in the 1.5 - 8 ?m region and mirrors for CO2 laser and spectrometer applications..

PRODUCTS

Phoenix Infrared offers silicon in blank substrate form, mirrors, phase retarders and other optical products. Silicon is CZ, P type doped with Boron, <111> or <100>, Resistivity 5 - 40 ohm cm FZ, N type doped with Phosphorus, <111>, Resistivity > 50, preferably > 500 ohm cm, the absorption at 9 microns is absent.

Silicon Mirrors: Diameter Tolerance: +0.0 / -0.10mm, Surface: plano / plano, Centration: <3 arc minutes, Clear Aperture: >85%, Surface Figure: l/2@632.8nm , Surface Quality: 10-5 scratch and dig, protective bevel

Chemical Properties
Density	2.33g/cm3
Hardness, Mohs	7
Dielectric Constant for 9.37 x 109 Hz	13
Melting point, °С	1414
Thermal Conductivity, W/m·K at 313 K	163
Thermal Expansion, 1/K at 293 K	2.6x10-6
Specific Heat Capacity, J/(kg°C)	712.8
Bandgap, eV	1.1
Knoop Hardness, kg/mm2	1100
Young's Modulus, Gpa	130.91
Shear Modulus, GPan	79.92
Bulk Modulus, GPa	101.97
Debye Temperature, K	640
Poisson's Ratio	0.28

Wavelength µm

Refractive
Index

1.395
1.661
1.813
2.153
2.325
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
10.000
11.040

3.498
3.493
3.461
3.448
3.443
3.432
3.428
3.426
3.424
3.422
3.421
3.420
3.420
3.419
3.419
3.418
3.418
3.418
3.418